SK hynix Kwak Noh-jung: Next-Generation Memory to Extend AI Market Leadership Beyond HBM
SK hynix Kwak Noh-jung: Next-Generation Memory to Extend AI Market Leadership Beyond HBM
  • Jung So-yeon
  • Published 2026.09.21 11:27
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CEO highlights sustained AI memory demand and expanded production and R&D infrastructure at Global Forum
SK hynix CEO Kwak Noh-jung delivering a keynote speech during the General Session of the 2026 SK Global Forum / Courtesy of SK hynix
SK hynix CEO Kwak Noh-jung delivering a keynote speech during the General Session of the 2026 SK Global Forum / Courtesy of SK hynix

SK hynix is looking beyond high-bandwidth memory (HBM) as it prepares next-generation memory technologies aimed at sustaining its competitiveness in the rapidly evolving artificial intelligence (AI) semiconductor market.

Kwak Noh-jung, CEO of SK hynix, outlined the company’s technology strategy during the 2026 Global Forum held Sept. 18 in Santa Clara, California.

Speaking at the event, Kwak emphasized the fundamental role of memory in AI infrastructure and said the company would build on its experience with HBM to develop the next generation of memory technologies and unlock new possibilities for AI.

He also pointed to continued demand for AI memory as AI applications and computing workloads expand. SK hynix plans to strengthen its manufacturing and research capabilities to support that growth, including investments in new production facilities and R&D infrastructure.

The company is expanding its manufacturing footprint through the Yongin Semiconductor Cluster in South Korea and a new fab in Indiana in the United States. It also plans to establish an AI-focused R&D center in the U.S.

The Global Forum, held under the theme “Share the Vision, Shape the Future, Together,” brought together SK hynix executives, global semiconductor and AI experts, and researchers from leading U.S. universities.

SK hynix has hosted the annual forum since 2012 as a platform for discussing its technology roadmap and future growth strategy with semiconductor professionals and researchers from around the world.

This year’s event featured a panel discussion titled “At the Turning Point of Technology: Opening the Next Chapter of Memory.” Senior executives overseeing DRAM design, AI interfaces, advanced packaging and memory systems research participated in the discussion.

The panel focused on how the rapid development of AI is changing the requirements for memory technology. Rather than optimizing individual components independently, the industry is increasingly required to connect chip design, process technology, advanced packaging and system architecture to address AI workloads as an integrated system.

The forum also featured eight roundtable sessions covering four areas: chip design, process and devices, advanced packaging, and AI systems. Industry experts and academic researchers exchanged views on emerging memory technologies and the future of AI semiconductor infrastructure.

SK hynix also showcased its major products, including HBM, alongside next-generation memory solutions. For the first time, the company also introduced research papers produced by SK hynix scholarship recipients and presented at international conferences and academic journals.

Through the forum, SK hynix highlighted its strategy of extending its AI memory capabilities beyond HBM while expanding manufacturing capacity and research infrastructure. The company is positioning next-generation memory, advanced packaging and system-level technologies as key areas for its continued development as AI computing evolves.


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