Company wins TSMC Partner of the Year award for second consecutive year following HBM5 validation with CoWoS
SK hynix is expanding its collaboration with TSMC in next-generation AI memory and advanced packaging, extending its technology roadmap beyond HBM4 to HBM5 as demand for high-performance memory continues to grow alongside large-scale AI infrastructure.
The company participated in the TSMC Open Innovation Platform (OIP) Forum held in Santa Clara, California, on Sept. 23, showcasing a broad portfolio of AI memory products ranging from high-bandwidth memory (HBM) to server DRAM and enterprise solid-state drives (eSSDs).
SK hynix has participated in TSMC’s OIP event since 2024. This year, the company presented its technologies under the theme “The Memory behind the Intelligence at Scale,” highlighting the growing role of memory in supporting increasingly powerful AI computing systems.
HBM4 Showcased with NVIDIA Vera Rubin
One of the highlights was SK hynix’s HBM4 and SOCAMM2 products displayed alongside NVIDIA’s next-generation AI superchip platform, Vera Rubin.
The company showcased a 36GB 12-layer HBM4 product and a 96GB SOCAMM2 designed for the Vera Rubin platform, demonstrating memory technologies aimed at supporting higher bandwidth and capacity requirements in next-generation AI systems.
SK hynix also presented an expanded HBM lineup, including a 48GB 12-layer HBM4E, a 48GB 16-layer HBM4 and a 36GB 12-layer HBM3E. A 192GB SOCAMM2 product was also displayed.
The lineup reflects the rapid expansion of AI server memory requirements beyond HBM, as high-capacity and power-efficient system memory becomes increasingly important alongside GPU performance.
AI Portfolio Expands to Server DRAM and eSSD
SK hynix also highlighted products designed for the broader AI data center infrastructure market.
Its server DRAM lineup included a 256GB 3DS RDIMM, a 128GB MRDIMM and a 64GB RDIMM based on the company’s sixth-generation 10-nanometer-class, or 1c, process technology.
For enterprise storage, the company showcased the PEB210 E1.S, which supports liquid cooling, and the PS1101 E3.S, a QLC-based enterprise SSD.
As AI data centers become larger and more power-intensive, memory bandwidth and storage capacity are increasingly being considered alongside energy consumption and thermal management. SK hynix is responding by broadening its portfolio across HBM, server DRAM and enterprise storage.
SK hynix and TSMC Advance HBM5 Collaboration
The partnership between SK hynix and TSMC is also moving into the next generation of HBM technology.
SK hynix received TSMC’s Partner of the Year award in the “3DFabric-HBM Integration” category for the second consecutive year.
The recognition follows collaborative work to validate next-generation HBM5 using TSMC’s CoWoS advanced packaging technology.
As HBM performance increases, advanced packaging is becoming increasingly important in connecting high-bandwidth memory with GPUs and other computing chips. Closer integration between memory and packaging technologies is therefore emerging as a key element in the development of future AI accelerators.
By expanding its portfolio from HBM4 and SOCAMM2 to server DRAM and eSSD while working with TSMC on HBM5 and advanced packaging, SK hynix is strengthening its technology base for the next phase of AI infrastructure development.
